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| IPD64CN10N G IPU64CN10N G OptiMOS(R)2 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 64 17 V m A * Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G Package Marking PG-TO252-3 64CN10N PG-TO251-3 64CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 17 13 68 34 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C I D=17 A, R GS=25 I D=17 A, V DS=80 V, di /dt =100 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 44 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 3) T jmax=150C and duty cycle D =0.01 for V GS<-5V page 1 2006-02-21 Rev. 1.01 IPD64CN10N G IPU64CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO252) R thJC minimal footprint 6 cm cooling area 4) 3.4 75 50 K/W Values typ. max. Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=17 A V GS=20 V, V DS=0 V V GS=10 V, I D=17 A 100 2 3 0.1 4 1 A V 8 10 1 45 1.6 15 100 100 64 nA m S 4) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-02-21 IPD64CN10N G IPU64CN10N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=17 A, R G=1.6 V GS=0 V, V DS=50 V, f =1 MHz - 428 132 6 7 3 9 2 569 176 10 11 4 14 4 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=17 A, V GS=0 to 10 V - 3 2 3 6 6.3 13 4 3 4 9 18 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=17 A, T j=25 C V R=50 V, I F=I S, di F/dt =100 A/s - 1 70 120 17 68 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-02-21 IPD64CN10N G IPU64CN10N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 50 20 40 15 30 P tot [W] I D [A] 20 10 0 0 50 100 150 200 10 5 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 102 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 10 s 100 s 101 Z thJC [K/W] DC 1 ms 0.5 I D [A] 100 10 ms 0.2 100 0.1 0.05 0.02 0.01 single pulse 10-1 10 -1 10-1 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.01 page 4 2006-02-21 IPD64CN10N G IPU64CN10N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 50 10 V 8V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 140 5 V 5.5 V 6 V 8V 40 120 7V 100 7V R DS(on) [m] 30 I D [A] 80 20 6.5 V 60 10 V 6V 40 10 5.5 V 5V 20 0 0 1 4.5 V 0 3 4 5 0 20 40 60 2 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 8 Typ. forward transconductance g fs=f(I D); T j=25 C 30 40 20 30 20 10 10 175 C 25 C 0 0 2 4 6 8 g fs [S] 0 0 10 20 30 40 50 I D [A] V GS [V] I D [A] Rev. 1.01 page 5 2006-02-21 IPD64CN10N G IPU64CN10N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=17 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 150 4 3.5 200 A 3 100 20 A R DS(on) [m] 2.5 98 % V GS(th) [V] typ 2 50 1.5 1 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 100 25 C 175 C, 98% 103 Ciss Coss 175 C 10 25 C, 98% C [pF] 102 I F [A] Crss 1 101 100 0 20 40 60 80 0.1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.01 page 6 2006-02-21 IPD64CN10N G IPU64CN10N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=17 A pulsed parameter: V DD 12 10 20 V 50 V 80 V 8 10 25 C 100 C V GS [V] 1000 I AS [A] 6 4 150 C 2 1 1 10 100 0 0 2 4 6 8 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 115 V GS Qg 110 V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 90 T j [C] Rev. 1.01 page 7 2006-02-21 IPD64CN10N G IPU64CN10N G PG-TO252-3: Outline Rev. 1.01 page 8 2006-02-21 IPD64CN10N G IPU64CN10N G PG-TO251-3: Outline Rev. 1.01 page 9 2006-02-21 IPD64CN10N G IPU64CN10N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 10 2006-02-21 |
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